Poly-TPD , Poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzi Property

storage temp. 

15-25°C

InChI

InChI=1S/C22H23N/c1-2-3-10-19-15-17-22(18-16-19)23(20-11-6-4-7-12-20)21-13-8-5-9-14-21/h4-9,11-18H,2-3,10H2,1H3

InChIKey

LGDCSNDMFFFSHY-UHFFFAOYSA-N

SMILES

N(C1C=CC=CC=1)(C1C=CC=CC=1)C1C=CC(CCCC)=CC=1

Safety

HS Code 

29211990

Hazard and Precautionary Statements (GHS)

Poly-TPD , Poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzi Chemical Properties,Usage,Production

Classification

Poly(triarylamines)
Organic semiconducting materials, Hole transport layer materials (HTL), Electron block layer material (EBL).
Organic Photovoltaics, Polymer Solar Cells, Light-emitting Diodes, Quantun Dot Light-emitting Diodes, OFETs and Perovskite hole transport layer materials.

Applications

Poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine, also known as polyTPD, is an excellent hole transport layer material used in photovoltaics such as perovskite solar cells. It has also proven polyTPD is a promising candidate HTL in multilayer WPLEDs because its HOMO level 5.2 eV is very close to the work function of the indium tin oxide ITO/poly3,4-ethylenedioxythiophene:polystyrenesulfonate PEDOT:PSS anode.
As the highest occupied molecular orbital (HOMO) of polyTPD matches well with the VB of the perovskite, which allows for a good transport of holes towards the polyTPD, it is a popular semiconducting material candidate that is used in the HTL of the perovskite structures. And also as the LUMO of polyTPD is significantly closer to vacuum compared with that of the perovskite CB, polyTPD efficiently blocks the flow of electrons.

Description

Poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine, also known as polyTPD, is an excellent hole transport layer material used in photovoltaics such as perovskite solar cells. It has also proven polyTPD is a promising candidate HTL in multilayer WPLEDs because its HOMO level 5.2 eV is very close to the work function of the indium tin oxide ITO/PEDOT:PSS anode.

Uses

In a recent study of a double-junction Quantum-Dot Light-Emitting Diodes (QD-LEDs), an impressive high quantum efficiency of 42.2% and a high current efficiency of 183.3 cd/A were achieved, which are comparable to those of the best vacuum-deposited tandem organic LEDs. Such high-efficiency devices are achieved by interface engineering of fully optimized single light-emitting units, which improves carriers′ transport/injection balance and suppresses exciton quenching induced by ZnO, and design of an effective interconnecting layer consisting of Poly-TPD mixed poly(9-vinylcarbazole) (PVK)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/polyethylenimine ethoxylated-modified ZnO.

Indoor photovoltaics is one of the best sustainable and reliable energy source for low power consumption electronics such as the rapidly growing Internet of Things.
In another recent study, Perovskite photovoltaic (PPV) cells with a mesoporous PPV (mPPV) structure using typical Spiro-OMeTAD as the hole transport layer (HTL) shows the highest maximum power density (Pmax) of 19.9 μW/cm² under 200 lux and 115.6 μWcm^-2 under 1000 lux (without masking), which is among the best of the indoor PV. When PEDOT:PSS is replaced by Poly-TPD as HTL in the inverted PPV (iPPV) cell, the Pmax under indoor light improves significantly and is comparable to that of the best mesoporous mPPV cell.


Device performance:
iPPV-Poly-TPD
1. under one sun [Pin=100 mW/cm²]
Jsc=21.8 mA/cm²
Voc=1.07 V
FF=73.7%
PCE=17.2%

2. under 1000 lux [200 lux]
Jsc=172.3 mA/cm²
Voc=0.851 V
FF=75.9%
Pmax=111.3 mW/cm