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Tetramethylgermane

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Tetramethylgermane Basic information

Product Name:
Tetramethylgermane
Synonyms:
  • (CH3)4Ge
  • tetramethyl-germaniu
  • tl81
  • GERMANIUM TETRAMETHYL
  • TETRAMETHYLGERMANE
  • TETRAMETHYLGERMANIUM
  • Tetralmethylgermanium
  • TETRAMETHYLGERMANIUM SOLUTION, ~2.9 M IN THF
CAS:
865-52-1
MF:
C4H12Ge
MW:
132.78
EINECS:
212-745-0
Product Categories:
  • organogermane
  • Chemical Synthesis
  • CVD and ALD Precursors by Metal
  • Germanium
  • Materials Science
  • Micro/NanoElectronics
  • Classes of Metal Compounds
  • Ge (Germanium) Compounds
  • Semimetal Compounds
  • GermaniumOrganometallic Reagents
  • Organogermanium
  • Others
  • Organometallic Reagents
  • Vapor Deposition Precursors
  • Precursors by Metal
  • Vapor Deposition Precursors
Mol File:
865-52-1.mol
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Tetramethylgermane Chemical Properties

Melting point:
-88 °C (dec.) (lit.)
Boiling point:
43-44 °C/740 mmHg (lit.)
Density 
0.978 g/mL at 25 °C (lit.)
vapor pressure 
6.74 psi ( 20 °C)
refractive index 
n20/D 1.389(lit.)
Flash point:
−35 °F
storage temp. 
Flammables area
form 
liquid
Specific Gravity
0.978
color 
colorless
Water Solubility 
Not miscible or difficult to mix in water.
Hydrolytic Sensitivity
4: no reaction with water under neutral conditions
Dielectric constant
1.8200000000000001
CAS DataBase Reference
865-52-1(CAS DataBase Reference)
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Safety Information

Hazard Codes 
F,Xn
Risk Statements 
11-20/21/22-36-36/37
Safety Statements 
16-26-36
RIDADR 
UN 1993 3/PG 2
WGK Germany 
3
RTECS 
LY5345000
TSCA 
No
HazardClass 
3
PackingGroup 
II
HS Code 
2931900090

MSDS

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Tetramethylgermane Usage And Synthesis

Chemical Properties

clear colorless to slightly yellow liquid

Uses

Employed as a Chemical Vapor Deposition (CVD) precursor to germanium oxide thin films.

Uses

CVD precursor to germanium oxide thin films.

reaction suitability

core: germanium

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