TRIS(DIMETHYLAMINO)SILANE
TRIS(DIMETHYLAMINO)SILANE Basic information
- Product Name:
- TRIS(DIMETHYLAMINO)SILANE
- Synonyms:
-
- TRIS(DIMETHYLAMINO)SILANE
- n,n,n’,n’,n’’,n’’-hexamethyl-silanetriamin
- n,n,n’,n’,n’’,n’’-hexamethylsilanetriamine
- N,N,N’,N’,N’’,N’’-hexamethyl-Silanetriamine
- TRIS(DIMETHYLAMINO)SILANE 99+%
- N,N',N''-(Silanetriyl)tris(dimethylamine)
- N,N',N''-Silanetriyltris(dimethylamine)
- TRIS(DIMETHYLAMINO)SILANE, 99.9+%
- CAS:
- 15112-89-7
- MF:
- C6H19N3Si
- MW:
- 161.32
- EINECS:
- 239-165-0
- Product Categories:
-
- ALD Precursors
- organosilicon compounds
- Mol File:
- 15112-89-7.mol
TRIS(DIMETHYLAMINO)SILANE Chemical Properties
- Melting point:
- <0°C
- Boiling point:
- 145 °C
- Density
- 0,838 g/cm3
- refractive index
- 1.4247
- Flash point:
- 25°C
- storage temp.
- 2-8°C, protect from light
- pka
- 10.93±0.70(Predicted)
- form
- liquid
- color
- colorless to light yellow
- Specific Gravity
- 0.84
- Hydrolytic Sensitivity
- 8: reacts rapidly with moisture, water, protic solvents
- Sensitive
- air sensitive, moisture sensitive
- InChI
- 1S/C6H19N3Si/c1-7(2)10(8(3)4)9(5)6/h10H,1-6H3
- InChIKey
- TWVSWDVJBJKDAA-UHFFFAOYSA-N
- SMILES
- CN(C)[SiH](N(C)C)N(C)C
- EPA Substance Registry System
- N,N,N',N',N'',N''-Hexamethylsilanetriamine (15112-89-7)
Safety Information
- Hazard Codes
- F,C
- Risk Statements
- 10-36/37/38-52/53-34-29-20-15-11
- Safety Statements
- 16-26-36/37/39-45-43
- RIDADR
- 1993
- WGK Germany
- 3
- RTECS
- VV5800000
- TSCA
- TSCA listed
- Storage Class
- 4.3 - Hazardous materials which set free flammable gases upon contact with water
- Hazard Classifications
- Acute Tox. 3 Dermal
Acute Tox. 3 Inhalation
Acute Tox. 4 Oral
Eye Dam. 1
Flam. Liq. 2
Skin Corr. 1B
Water-react 2 - Toxicity
- rabbit,LD50,skin,477mg/kg (477mg/kg),LIVER: OTHER CHANGESLUNGS, THORAX, OR RESPIRATION: CHRONIC PULMONARY EDEMA,Toxicology and Industrial Health. Vol. 5, Pg. 45, 1989.
TRIS(DIMETHYLAMINO)SILANE Usage And Synthesis
Uses
Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.
General Description
Please inquire for quantity, pricing, and packaging options.
reaction suitability
reagent type: reductant
Synthesis
A method for preparing tris(dimethylamino)silane, comprising the steps of: adding dimethylamine and a hydrocarbon solvent to a reactor under the protection of an inert atmosphere, and then adding an organolithium compound to the system to produce a lithium salt of dimethylamine; adding trichlorosilane to the system; and distilling at the end of the reaction to obtain tris(dimethylamino)silane.
TRIS(DIMETHYLAMINO)SILANESupplier
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