2,4,6,8-Tetramethylcyclotetrasiloxane Chemical Properties

Melting point:

−69 °C(lit.)

Boiling point:

134 °C(lit.)

Density 

0.986 g/mL at 25 °C(lit.)

vapor pressure 

0.05-479Pa at 20℃

refractive index 

n20/D 1.387(lit.)

Flash point:

76 °F

storage temp. 

2-8°C

form 

liquid

Specific Gravity

0.991

color 

Colorless to Almost colorless

Water Solubility 

Miscible with most organic solvents. Immiscible with water.

Hydrolytic Sensitivity

3: reacts with aqueous base

Sensitive 

Moisture Sensitive

BRN 

1787074

InChIKey

BQYPERTZJDZBIR-UHFFFAOYSA-N

LogP

-2.4-5.54 at 25℃

CAS DataBase Reference

2370-88-9(CAS DataBase Reference)

EPA Substance Registry System

Cyclotetrasiloxane, 2,4,6,8-tetramethyl- (2370-88-9)

Safety Information

Hazard Codes 

Xi

Risk Statements 

10-36

Safety Statements 

16-26-36

RIDADR 

UN 1993 3/PG 3

WGK Germany 

3

F 

10-21

TSCA 

Yes

HazardClass 

3

PackingGroup 

III

HS Code 

29319090

MSDS

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• Language:English Provider:SigmaAldrich
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2,4,6,8-Tetramethylcyclotetrasiloxane Usage And Synthesis

Description

2, 4, 6, 8-TETRAMETHYLCYCLOTETRASILOXANE can be used as the precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, and gate dielectrics in thin-film transistors (TFT) (for example, for the preparation of ultralow dielectric constant pSiCOH film), and is a component of photochemically formed SiOX monolayers on TiO. It is a good impregnant of photoelectric material. It can be used for the manufacturing of modified siloxane with defined hydrogen content and chain quality.

Chemical Properties

Colorless or yellowish transparent liquid

Uses

2,4,6,8-Tetramethylcyclotetrasiloxane can occur addition reaction with unsaturated alkenes, so it’s utilized widely to synthesize variety functional reactive silicone fluids which is used to form silicone block copolymer, or used as crosslinker of vinyl addition silicone rubber. Tetramethyl-cyclotetrasiloxane is a good impregnant of photoelectric material. It is used to manufacture of modified siloxane with defined hydrogen content and chain quantity. It is also used in production of silicone polymers and acts as a precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics and semiconductors.

Uses

2, 4, 6, 8-Tetramethylcyclotetrasiloxane (TMCTS) is an important precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics, semiconductors and other applications

General Description

Atomic number of base material: 14 Silicon

Flammability and Explosibility

Flammable

Synthesis

The synthesis process of 2,4,6,8-Tetramethylcyclotetrasiloxane is as follows. A 1-L four-necked flask equipped with a thermometer, stirrer, column packed with cylindrical glass of about 1x1 mm to a height of 500 mm, water-cooled condenser, outlet tube, and distillate receiver was connected to a vacuum pump. To the flask were fed 100 g of trimethylsiloxy end-capped dimethylpolysiloxane having a viscosity of 10,000 centistokes at 25°C and 1.0 g of the catalyst (i) synthesized above, after which agitation was commenced. While the flask interior was kept under a reduced pressure of 50 mmHg, the flask was heated at 250-260°C using a mantle heater. A fraction distilled out for 14 hours was collected (45 g). The residue (31 g) was a clear liquid. yeild= 52%

References

https://www.alfa.com/zh-cn/catalog/L16642/
http://www.sigmaaldrich.com/catalog/product/aldrich/512990?lang=en&region=US
Grill, A., and V. Patel. "Ultralow dielectric constant pSiCOH films prepared with tetramethylcyclotetrasiloxane as skeleton precursor." Journal of Applied Physics 104.2(2008):107.
Zhang, Jianming, D. S. Wavhal, and E. R. Fisher. "Mechanisms of SiO2 film deposition from tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas." Journal of Vacuum Science & Technology A Vacuum Surfaces & Films 22.1(2004):201-213.
Fujino, Katsuhiro, et al. "Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition, Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone." Japanese Journal of Applied Physics 33. 4A (1994):2019-2024.

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