TRI-T-BUTOXYSILANOL
TRI-T-BUTOXYSILANOL Basic information
- Product Name:
- TRI-T-BUTOXYSILANOL
- Synonyms:
-
- TRI-T-BUTOXYSILANOL
- TRIS(TERT-BUTOXY)SILANOL
- TRIS(T-BUTOXY)SILANOL
- Tri-tert-butoxysilanol
- Tri-t-butoxysilanol (99.9+%-Si)
- Tri-t-butoxysilanol (99.999%-Si) PURATREM 14-7015 contained in 50 ml Swagelok(R) cylinder (96-1077) for CVD/ALD
- hydroxy-tris[(2-methylpropan-2-yl)oxy]silane
- Tri-t-butoxysilanol PURATREM 14-7015 contained in 50 Ml Swagelokcylinder (96-1077) for CVD/ALD
- CAS:
- 18166-43-3
- MF:
- C12H28O4Si
- MW:
- 264.43
- Product Categories:
-
- Micro/Nanoelectronics
- Organosilicon
- Precursors by Metal
- Precursors Packaged for Deposition SystemsOrganometallic Reagents
- SilanolsVapor Deposition Precursors
- Vapor Deposition Precursors
- 14: Silicon
- Chemical Synthesis
- CVD and ALD Precursors by Metal
- CVD and ALD Precursors Packaged for Deposition Systems
- Materials Science
- Organometallic Reagents
- Silanols
- Silicon
- Silanes
- Solution Deposition Precursors
- Vapor Deposition Precursors
- Mol File:
- 18166-43-3.mol
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TRI-T-BUTOXYSILANOL Chemical Properties
- Melting point:
- 63-65 °C(lit.)
- Boiling point:
- 205-210 °C(lit.)
- Density
- 0,92 g/cm3
- Flash point:
- >65°C
- storage temp.
- Inert atmosphere,Room Temperature
- form
- solid
- pka
- 11.78±0.53(Predicted)
- Hydrolytic Sensitivity
- 7: reacts slowly with moisture/water
- Sensitive
- moisture sensitive
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MSDS
- Language:English Provider:SigmaAldrich
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TRI-T-BUTOXYSILANOL Usage And Synthesis
Uses
Silicon oxide source for rapid atomic layer deposition to prepare various nanolaminates.
Uses
Precursors Packaged for Depositions Systems
Uses
Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.
General Description
Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.
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