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HAFNIUM TERT-BUTOXIDE

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HAFNIUM TERT-BUTOXIDE Basic information

Product Name:
HAFNIUM TERT-BUTOXIDE
Synonyms:
  • HAFNIUM (IV) T-BUTOXIDE
  • HAFNIUM T-BUTOXIDE
  • HAFNIUM TERT-BUTOXIDE
  • HAFNIUM TETRA-T-BUTOXIDE
  • Hafnium(IV) t-butoxide (99.9%-Hf)
  • Hafnium tert-butoxide, 99.9% (metals basis excluding Zr), Zr< 0.2%
  • Hafnium(IV) tert-butoxide
  • Hafnium(IV) tert-butoxide, 99.9% trace metals basis excluding Zr
CAS:
2172-02-3
MF:
C16H36HfO4
MW:
470.94
Product Categories:
  • metal alkoxide
  • Hafnium
  • Micro/Nanoelectronics
  • Solution Deposition Precursors
Mol File:
2172-02-3.mol
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HAFNIUM TERT-BUTOXIDE Chemical Properties

Melting point:
2℃
Boiling point:
90 °C5 mm Hg(lit.)
Density 
1.166 g/mL at 25 °C(lit.)
refractive index 
n20/D 1.424(lit.)
Flash point:
83 °F
solubility 
Soluble in hydrocarbons, reacts with alcohols, ketones, and esters
form 
Liquid
Specific Gravity
1.166
Hydrolytic Sensitivity
7: reacts slowly with moisture/water
Sensitive 
Moisture Sensitive/Light Sensitive
Exposure limits
ACGIH: TWA 0.5 mg/m3
NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3
CAS DataBase Reference
2172-02-3(CAS DataBase Reference)
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Safety Information

Hazard Codes 
Xi
Risk Statements 
10-36/37/38
Safety Statements 
16-26
RIDADR 
UN 1993 3/PG 3
WGK Germany 
3
TSCA 
No
HazardClass 
3
PackingGroup 
II
HS Code 
2905190019

MSDS

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HAFNIUM TERT-BUTOXIDE Usage And Synthesis

Uses

Hafnium tert-butoxide [Hf(OtBu)4] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices.

General Description

Atomic number of base material: 72 Hafnium

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