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TETRAKIS(DIETHYLAMINO)ZIRCONIUM

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TETRAKIS(DIETHYLAMINO)ZIRCONIUM Basic information

Product Name:
TETRAKIS(DIETHYLAMINO)ZIRCONIUM
Synonyms:
  • Tetrakis(diethylaMino)zirconiuM(IV), 99%
  • Zirconium, tetrakis(diethylamino)-
  • TETRAKIS(DIETHYLAMIDO)ZIRCONIUM(IV), ELECTRONIC GRADE, 99.99+%
  • Tetrakis(diethylamino)zirkonium
  • Tetrakis(diethylamino)zirconium,99%
  • tetrakis(diethylamido)zirconium(iv)
  • TETRAKIS(DIETHYLAMINO)ZIRCONIUM
  • ZIRCONIUM DIETHYLAMIDE
CAS:
13801-49-5
MF:
C4H11NZr
MW:
164.36
Product Categories:
  • Precursors by Metal
  • metal amide complex
  • Vapor Deposition Precursors
  • Zirconium
Mol File:
13801-49-5.mol
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TETRAKIS(DIETHYLAMINO)ZIRCONIUM Chemical Properties

Boiling point:
128 °C/0.05 mmHg (lit.)
Density 
1.026 g/mL at 25 °C (lit.)
refractive index 
n20/D 1.51(lit.)
Flash point:
54 °F
storage temp. 
2-8°C
form 
liquid
color 
yellow
Sensitive 
Moisture Sensitive
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Safety Information

Hazard Codes 
F,Xi
Risk Statements 
11-14-36/37/38
Safety Statements 
16-26-36
RIDADR 
UN 3398 4.3/PG 2
WGK Germany 
3
HazardClass 
4.3
PackingGroup 
II

MSDS

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TETRAKIS(DIETHYLAMINO)ZIRCONIUM Usage And Synthesis

Description

Tetrakis (diethylamino) zirconium is a useful precusor compound in the deposition of thin film ferroelectric materials by CVD. It is also useful in the production of olefin polymers1,2. As a precusor, it is also useful in the deposition of ZrN films using remote plasma-enhanced atomic layer deposition method3.

Reference

  1. Greenwald, Anton C. "CVD thin film compounds." US, US5104690. 1992.
  2. Murray, Rex Eugene. "Catalyst for the production of olefin polymers." US, US 6320005 B1. 2001.
  3. Cho, Seungchan, et al. "Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis (diethylamino) zirconium Precursor." Japanese Journal of Applied Physics 46. 7A (2007):4085-4088.

Uses

Tetrakis(diethylamino)zirconium is used in the preparation of ZrN and ZrO2 films as well as zirconium complexes to act as catalytic precursors for organic chemical reactions.

General Description

Atomic number of base material: 40 Zirconium

TETRAKIS(DIETHYLAMINO)ZIRCONIUMSupplier

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