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GALLIUM TELLURIDE

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GALLIUM TELLURIDE Basic information

Product Name:
GALLIUM TELLURIDE
Synonyms:
  • GALLIUM(II) TELLURIDE
  • GALLIUM TELLURIDE
  • galliumtelluride(gate)
  • Gallium(II) telluride, 99.999% (metals basis)
  • Gallium monotelluride
  • Gallium(II) telluride (GaTe)
  • Gallium(II) telluride lump
  • Gallium(II) telluride, 99.999%, trace metals basis
CAS:
12024-14-5
MF:
GaH2Te
MW:
199.34
EINECS:
234-690-1
Mol File:
12024-14-5.mol
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GALLIUM TELLURIDE Chemical Properties

Melting point:
824°C
Density 
5.440
form 
monoclinic crystals
color 
monoclinic crystals, crystalline
Water Solubility 
Insoluble in water.
Sensitive 
Moisture Sensitive
Exposure limits
ACGIH: TWA 0.1 mg/m3
NIOSH: IDLH 25 mg/m3; TWA 0.1 mg/m3
EPA Substance Registry System
Gallium telluride (GaTe) (12024-14-5)
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Safety Information

Hazard Codes 
Xn
Risk Statements 
22-36/37/38
Safety Statements 
22-24/25
TSCA 
TSCA listed
HS Code 
2853909090

MSDS

  • Language:English Provider:ALFA
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GALLIUM TELLURIDE Usage And Synthesis

Chemical Properties

6mm pieces and smaller with 99.999% purity; monoclinic or hexagonal [KIR78] [CER91]

Uses

Gallium(II) telluride acts as a semiconductor is used in the electronics industry.

Synthesis

A method for the preparation of a two-dimensional gallium telluride material method, characterized by the following steps: step I. GaTe single crystals were prepared by dosing Ga:Te in a substance amount ratio of 1:1 using the vertical Bridgman crystal growth method. Step II. In a Michelona Universal 2440-750 glove box under Ar atmosphere, a large block of surface light was selected smooth and wrinkle-free GaTe bulk material and separated it into multiple blocks along the natural solvation surface. Step 3: Inside a Michelona Universal 2440-750 glove box under Ar atmosphere, a GaTe sheet with a thickness of about 6-8 ??m was torn away from the surface of the GaTe bulk material with a bright surface and less damage using Scotch tape. Step 4: In a Michelona Universal 2440-750 glove box under Ar atmosphere, the Scotch tape with the GaTe sheet was bonded and separated several times until the surface of the tape was no longer shiny and a denser layer of GaTe with a thickness of several hundred nanometers was successfully attached.

GALLIUM TELLURIDESupplier

Alfa Aesar
Tel
400-6106006
Email
saleschina@alfa-asia.com
Shandong Xiya Chemical Co., Ltd
Tel
13355009207 13355009207
Email
3007715519@qq.com
Beijing HuaMeiHuLiBiological Chemical
Tel
010-56205725
Email
waley188@sohu.com
Shanghai Aladdin Bio-Chem Technology Co.,LTD
Tel
400-6206333 13167063860
Email
anhua.mao@aladdin-e.com
Bide Pharmatech Ltd.
Tel
400-400-164-7117 18317119277
Email
product02@bidepharm.com