1,1,3,3-Tetramethyldisilazane Chemical Properties

Melting point:

99-100 °C

Boiling point:

99-100 °C

Density 

0.752 g/mL at 25 °C(lit.)

refractive index 

n20/D 1.404(lit.)

Flash point:

17 °F

storage temp. 

Store below +30°C.

solubility 

Miscible with common organic solvents.

pka

9.80±0.70(Predicted)

form 

clear liquid

color 

Colorless to Almost colorless

Specific Gravity

0.752

Hydrolytic Sensitivity

7: reacts slowly with moisture/water

Sensitive 

Moisture Sensitive

BRN 

741869

InChI

1S/C4H15NSi2/c1-6(2)5-7(3)4/h5-7H,1-4H3

InChIKey

NQCZAYQXPJEPDS-UHFFFAOYSA-N

SMILES

[H][Si](C)(C)N[Si]([H])(C)C

CAS DataBase Reference

15933-59-2(CAS DataBase Reference)

EPA Substance Registry System

Silanamine, N-(dimethylsilyl)-1,1-dimethyl- (15933-59-2)

Safety Information

Hazard Codes 

F,Xi

Risk Statements 

11-36/37/38

Safety Statements 

16-26-36

RIDADR 

UN 2924 3/PG 2

WGK Germany 

3

F 

10-21

TSCA 

TSCA listed

HazardClass 

3

PackingGroup 

II

HS Code 

29319090

Storage Class

3 - Flammable liquids

Hazard Classifications

Eye Irrit. 2
Flam. Liq. 2
Skin Irrit. 2
STOT SE 3

MSDS

• Language:English Provider:SigmaAldrich
• Language:English Provider:ACROS
• Language:English Provider:ALFA

1,1,3,3-Tetramethyldisilazane Usage And Synthesis

Chemical Properties

Clear colorless to faintly yellow liquid

Physical properties

bp 99–100 °C; n20 D 1.4040; d 0.752 g cm3.

Uses

1,1,3,3-Tetramethyldisilazane is widely used in intramolecular hydrosilation of allyl alcohols, homoallyl alcohols, and homopropargyl alcohols for the regio- and stereoselective synthesis of polyols

Uses

Tetramethyldisilazane is used as a gas chromatographic derivatizing reagent. Further, it reacts with phenol to prepare dimethylphenoxysilane. In addition, it is used in electronic, polymer and pharmaceutical industries.

Properties and Applications

The ICP CVD synthesis of SiCxNy: H thin films using 1,1,3,3-tetramethyldisilazane (TMDSZ ) as a single-source precursor and argon as a gas-activator[1]. Using TMDSZ as the single-source compound produced amorphous hydrogenated silicon carbonitride (a-SiCN: H) films, whereas no such films were formed when HMDSZ was used, which was attributed to the lack of Si–H bond in HMDSZ. Under the collision-free condition, the formation of CH3, NH3, and DMSA was demonstrated from the decomposition of TMDSZ on the heated W filament. Free-radical short-chain reactions dominate the secondary gas-phase reactions of TMDSZ in the reactor setup. The short-chain reaction is initiated by the formation of methyl radicals via the cleavage of the Si–CH3 bonds of TMDSZ. The H abstraction by the produced methyl radicals from the Si–H or the C–H bond in various stable molecules (e.g., TMDSZ) propagates the chain with a resulting radical, which recombines with another radical to terminate the chain reactions, producing a series of products in the high-mass region[2].

References

[1] Maksim N. Chagin. “Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane.” Coatings (2022).
[2] James Michael Stevenson, Eric Ampong and Yujun Shi*. “Understanding the Reaction Chemistry of 1,1,3,3-Tetramethyldisilazane as a Precursor Gas in a Catalytic Chemical Vapor Deposition Process.” The Journal of Physical Chemistry A 127 44 (2023): 9185–9195.

1,1,3,3-Tetramethyldisilazane(15933-59-2)Related Product Information

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• NONAMETHYLTRISILAZANE
• 1,1,3,3-Tetramethyldisilazane