1,1,3,3-Tetramethyldisilazane Chemical Properties

Melting point:

99-100 °C

Boiling point:

99-100 °C

Density 

0.752 g/mL at 25 °C(lit.)

refractive index 

n20/D 1.404(lit.)

Flash point:

17 °F

storage temp. 

Store below +30°C.

solubility 

Miscible with common organic solvents.

pka

9.80±0.70(Predicted)

form 

clear liquid

color 

Colorless to Almost colorless

Specific Gravity

0.752

Hydrolytic Sensitivity

7: reacts slowly with moisture/water

Sensitive 

Moisture Sensitive

BRN 

741869

CAS DataBase Reference

15933-59-2(CAS DataBase Reference)

EPA Substance Registry System

Silanamine, N-(dimethylsilyl)-1,1-dimethyl- (15933-59-2)

Safety Information

Hazard Codes 

F,Xi

Risk Statements 

11-36/37/38

Safety Statements 

16-26-36

RIDADR 

UN 2924 3/PG 2

WGK Germany 

3

F 

10-21

TSCA 

Yes

HazardClass 

3

PackingGroup 

II

HS Code 

29319090

MSDS

• Language:English Provider:SigmaAldrich
• Language:English Provider:ACROS
• Language:English Provider:ALFA

1,1,3,3-Tetramethyldisilazane Usage And Synthesis

Chemical Properties

Clear colorless to faintly yellow liquid

Physical properties

bp 99–100 °C; n20 D 1.4040; d 0.752 g cm?3.

Uses

Tetramethyldisilazane is used as a gas chromatographic derivatizing reagent. Further, it reacts with phenol to prepare dimethylphenoxysilane. In addition, it is used in electronic, polymer and pharmaceutical industries.

Uses

1,1,3,3-Tetramethyldisilazane is widely used in intramolecular hydrosilation of allyl alcohols, homoallyl alcohols, and homopropargyl alcohols for the regio- and stereoselective synthesis of polyols

Properties and Applications

The ICP CVD synthesis of SiCxNy: H thin films using 1,1,3,3-tetramethyldisilazane (TMDSZ ) as a single-source precursor and argon as a gas-activator[1]. Using TMDSZ as the single-source compound produced amorphous hydrogenated silicon carbonitride (a-SiCN: H) films, whereas no such films were formed when HMDSZ was used, which was attributed to the lack of Si–H bond in HMDSZ. Under the collision-free condition, the formation of ?CH3, NH3, and DMSA was demonstrated from the decomposition of TMDSZ on the heated W filament. Free-radical short-chain reactions dominate the secondary gas-phase reactions of TMDSZ in the reactor setup. The short-chain reaction is initiated by the formation of methyl radicals via the cleavage of the Si–CH3 bonds of TMDSZ. The H abstraction by the produced methyl radicals from the Si–H or the C–H bond in various stable molecules (e.g., TMDSZ) propagates the chain with a resulting radical, which recombines with another radical to terminate the chain reactions, producing a series of products in the high-mass region[2].

References

[1] Maksim N. Chagin. “Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane.” Coatings (2022).
[2] James Michael Stevenson, Eric Ampong and Yujun Shi*. “Understanding the Reaction Chemistry of 1,1,3,3-Tetramethyldisilazane as a Precursor Gas in a Catalytic Chemical Vapor Deposition Process.” The Journal of Physical Chemistry A 127 44 (2023): 9185–9195.

1,1,3,3-Tetramethyldisilazane(15933-59-2)Related Product Information

• Tetramethylammonium nitrate
• (S,S)-(-)-2,3-DIHYDROXY-N,N,N',N'-TETRAMETHYLSUCCINAMIDE
• TETRAMETHYL-1,3-CYCLOBUTANEDIONE
• TETRAMETHYLSUCCINONITRILE
• 2,2,6,6-Tetramethyl-4-piperidinol
• TETRAMETHYLAMMONIUM HYDROGENSULFATE
• Octamethylcyclotetrasilazane
• 1,3-BIS(CHLOROMETHYL)TETRAMETHYLDISILAZANE
• Lithium bis(trimethylsilyl)amide
• 2,2,4,4,6,6-Hexamethylcyclotrisilazane
• 1,3-DIMETHYL-1,1,3,3-TETRAPHENYLDISILAZANE
• Hexamethyldisilazane
• 1,1,3,3-Tetramethyl-1,3-divinyldisilazane
• HEPTAMETHYLDISILAZANE
• Sodium bis(trimethylsilyl)amide
• N,N-Bis(trimethylsilyl)formamide
• NONAMETHYLTRISILAZANE
• 1,1,3,3-Tetramethyldisilazane