Germanium telluride
Germanium telluride Basic information
- Product Name:
- Germanium telluride
- Synonyms:
-
- GERMANIUM (II) TELLURIDE
- GERMANIUM TELLURIDE
- Germanium telluride(GeTe GeTe)
- Germanium(II) telluride, pieces 6mm & down 99.999%
- Germanium(II) telluride lump
- Germanium(II) telluride, 99.999%, trace metals basis
- GERMANIUM(II) TELLURIDE 99.999%
- Germanium telluride, 99.999%
- CAS:
- 12025-39-7
- MF:
- GeTe
- MW:
- 200.24
- EINECS:
- 234-706-7
- Mol File:
- 12025-39-7.mol
Germanium telluride Chemical Properties
- Melting point:
- 725 °C(lit.)
- Density
- 6.14 g/mL at 25 °C(lit.)
- solubility
- insoluble in H2O; soluble in concentrated HNO 3
- form
- Powder
- Specific Gravity
- 6.2
- color
- Black
- Water Solubility
- Insoluble in water.
- Crystal Structure
- Cubic, Halite Structure - Space Group Fm3m
- Exposure limits
- ACGIH: TWA 0.1 mg/m3
NIOSH: IDLH 25 mg/m3; TWA 0.1 mg/m3 - CAS DataBase Reference
- 12025-39-7(CAS DataBase Reference)
- EPA Substance Registry System
- Germanium telluride (GeTe) (12025-39-7)
MSDS
- Language:English Provider:SigmaAldrich
- Language:English Provider:ALFA
Germanium telluride Usage And Synthesis
Chemical Properties
Germanium telluride (GeTe) is an efficient semiconductor of germanium and tellurium and is a phase-change material. It is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, α and γ) and one at high temperature (crystalline, β ). It shows semimetallic conduction and ferroelectric behaviour.
Uses
Germanium telluride (GeTe) is a promising material for thermoelectric applications. Nanostructuring; non-stoichiometric defects; doping and alloying with other materials further enhances its thermoelectric performance.
GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories.
Application
Germanium telluride is a promising thermoelectric compound with uses in doping, alloying, and nanostructuring, non-stoichiometric defects. It is also an important semiconductor that can act as a low temperature superconductor when doped. GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories.
Preparation
Germanium telluride is produced by heating Ge (less resistivity) and Te (99.998%) to their melting points in an evacuated quartz tube. single crystals can be obtained using the zone melting method.
General Description
This product has been enhanced for energy efficiency.
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Germanium telluride(12025-39-7)Related Product Information
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