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Germanium telluride

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Germanium telluride Basic information

Product Name:
Germanium telluride
Synonyms:
  • GERMANIUM (II) TELLURIDE
  • GERMANIUM TELLURIDE
  • Germanium telluride(GeTe GeTe)
  • Germanium(II) telluride, pieces 6mm & down 99.999%
  • Germanium(II) telluride lump
  • Germanium(II) telluride, 99.999%, trace metals basis
  • GERMANIUM(II) TELLURIDE 99.999%
  • Germanium telluride, 99.999%
CAS:
12025-39-7
MF:
GeTe
MW:
200.24
EINECS:
234-706-7
Mol File:
12025-39-7.mol
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Germanium telluride Chemical Properties

Melting point:
725 °C(lit.)
Density 
6.14 g/mL at 25 °C(lit.)
solubility 
insoluble in H2O; soluble in concentrated HNO 3
form 
Powder
Specific Gravity
6.2
color 
Black
Water Solubility 
Insoluble in water.
Crystal Structure
Cubic, Halite Structure - Space Group Fm3m
Exposure limits
ACGIH: TWA 0.1 mg/m3
NIOSH: IDLH 25 mg/m3; TWA 0.1 mg/m3
CAS DataBase Reference
12025-39-7(CAS DataBase Reference)
EPA Substance Registry System
Germanium telluride (GeTe) (12025-39-7)
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Safety Information

Risk Statements 
22
Safety Statements 
36
WGK Germany 
3
TSCA 
Yes
HS Code 
2842901090

MSDS

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Germanium telluride Usage And Synthesis

Chemical Properties

Germanium telluride (GeTe) is an efficient semiconductor of germanium and tellurium and is a phase-change material. It is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, α and γ) and one at high temperature (crystalline, β ). It shows semimetallic conduction and ferroelectric behaviour.

Uses

Germanium telluride (GeTe) is a promising material for thermoelectric applications. Nanostructuring; non-stoichiometric defects; doping and alloying with other materials further enhances its thermoelectric performance.
GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories.

Application

Germanium telluride is a promising thermoelectric compound with uses in doping, alloying, and nanostructuring, non-stoichiometric defects. It is also an important semiconductor that can act as a low temperature superconductor when doped. GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories.

Preparation

Germanium telluride is produced by heating Ge (less resistivity) and Te (99.998%) to their melting points in an evacuated quartz tube. single crystals can be obtained using the zone melting method.

General Description

This product has been enhanced for energy efficiency.

Germanium tellurideSupplier

Meryer (Shanghai) Chemical Technology Co., Ltd.
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021-61259108 18621169109
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Alfa Aesar
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400-6106006
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Energy Chemical
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021-021-58432009 400-005-6266
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Beijing HuaMeiHuLiBiological Chemical
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010-56205725
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HBCChem, Inc.
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+1-510-219-6317
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sales@hbcchem.com