4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine Chemical Properties

Melting point:

203-207°C

Density 

1.190±0.06 g/cm3(Predicted)

storage temp. 

2-8°C

pka

-1.07±0.60(Predicted)

form 

powder

color 

White to Yellow

Absorption

λmax?312 nm, 342 nm in THF

Safety Information

Hazard Codes 

Xi

Risk Statements 

36/37/38

Safety Statements 

26-36

WGK Germany 

3

HS Code 

29214200

4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine Usage And Synthesis

Applications

With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices. F4-TCNQ, a strong electron acceptor, is always used together with m-MTDATA as a p-doping material to improve the conductivity of the HTL buffering layer. Typical structure of the device (or part of the device) is ITO/p-doped m-MTDATA/HTL/etc.

Description

With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices.

Uses

Hole-transporting layer and Hole Injection layer material for High-Performance OLEDs.

4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine(124729-98-2)Related Product Information

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