Bis(diethylamino)silane
- Product Name
- Bis(diethylamino)silane
- CAS No.
- 27804-64-4
- Chemical Name
- Bis(diethylamino)silane
- Synonyms
- BDEAS;SilanediaMide;amino)dihydrosiL;BIS(DIETHYLAMINO)SILANE;BDEAS: SiH2[N(CH2CH3)2]2;Bis(diethylamino)silane BDEAS;bis(diethylamino)dihydrosilane;Bis(diethylamino) Silane Liquid;N,N,N',N'-Tetraethylsilanediamine;N,N,N',N'-Tetraethylsilanediamine
- CBNumber
- CB32653773
- Molecular Formula
- C8H22N2Si
- Formula Weight
- 174.36
- MOL File
- 27804-64-4.mol
Bis(diethylamino)silane Property
- Boiling point:
- 70°C (30mm)
- Density
- 0.804
- form
- liquid
- pka
- 10.31±0.70(Predicted)
- Specific Gravity
- 0.804
- color
- colorless
- Sensitive
- air sensitive, moisture sensitive
- Hydrolytic Sensitivity
- 8: reacts rapidly with moisture, water, protic solvents
Hazard and Precautionary Statements (GHS)
- Symbol(GHS)
-
- Signal word
- Danger
- Hazard statements
-
H225Highly Flammable liquid and vapour
H260In contact with water releases flammable gases which may ignite spontaneously
H314Causes severe skin burns and eye damage
H335May cause respiratory irritation
- Precautionary statements
-
P210Keep away from heat/sparks/open flames/hot surfaces. — No smoking.
P223Keep away from any possible contact with water, because of violent reaction and possible flash fire.
P231+P232Handle under inert gas. Protect from moisture.
P233Keep container tightly closed.
P240Ground/bond container and receiving equipment.
P241Use explosion-proof electrical/ventilating/lighting/…/equipment.
P242Use only non-sparking tools.
P243Take precautionary measures against static discharge.
P260Do not breathe dust/fume/gas/mist/vapours/spray.
P264Wash hands thoroughly after handling.
P264Wash skin thouroughly after handling.
P280Wear protective gloves/protective clothing/eye protection/face protection.
P301+P330+P331IF SWALLOWED: Rinse mouth. Do NOT induce vomiting.
P303+P361+P353IF ON SKIN (or hair): Remove/Take off Immediately all contaminated clothing. Rinse SKIN with water/shower.
P304+P340IF INHALED: Remove victim to fresh air and Keep at rest in a position comfortable for breathing.
P305+P351+P338IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continuerinsing.
P310Immediately call a POISON CENTER or doctor/physician.
P321Specific treatment (see … on this label).
P335+P334Brush off loose particles from skin. Immerse in cool water/wrap in wet bandages.
P363Wash contaminated clothing before reuse.
P370+P378In case of fire: Use … for extinction.
P402+P404Store in a dry place. Store in a closed container.
P403+P235Store in a well-ventilated place. Keep cool.
P405Store locked up.
P501Dispose of contents/container to..…
N-Bromosuccinimide Price
- Product number
- 14-7030
- Product name
- Bis(diethylamino)silane, 97% BDEAS
- Packaging
- 5g
- Price
- $131
- Updated
- 2024/03/01
- Product number
- 14-7030
- Product name
- Bis(diethylamino)silane, 97% BDEAS
- Packaging
- 25g
- Price
- $523
- Updated
- 2024/03/01
- Product number
- 98-8810
- Product name
- Bis(diethylamino)silane, 99% (99.999%-Si) BDEAS PURATREM
- Packaging
- 5g
- Price
- $190
- Updated
- 2024/03/01
- Product number
- 98-8810
- Product name
- Bis(diethylamino)silane, 99% (99.999%-Si) BDEAS PURATREM
- Packaging
- 25g
- Price
- $756
- Updated
- 2024/03/01
- Product number
- ORS0003332
- Product name
- BIS(DIETHYLAMINO)SILANE
- Purity
- 95.00%
- Packaging
- 5MG
- Price
- $500.75
- Updated
- 2021/12/16
Bis(diethylamino)silane Chemical Properties,Usage,Production
Uses
Bis(diethylamino) silane (BDEAS) is a highly volatile precursor with a vapor pressure of 30 Torr at 70°C and is liquid at room temperature with a melting point of less than ?10°C and a boiling point of 188°C. It is studied and evaluated as a liquid-phase silicon precursor in the low-temperature atomic layer deposition (ALD) of hafnium silicate films. BDEAS and TDEAH are suitable precursors for the ALD of SiO2, HfO2, or HfSiOx films when used in conjunction with ozone. The composition of various HfSiOx films evaluated from RBS spectra demonstrates excellent tunability of film composition[1].
References
[1] Rajesh Katamreddy, C. Takoudis, B. Feist. “Bis(diethylamino) silane as the silicon precursor in the atomic layer deposition of HfSiOx.” Journal of The Electrochemical Society 155 1 (2008).
Bis(diethylamino)silane Preparation Products And Raw materials
Raw materials
Preparation Products
Bis(diethylamino)silane Suppliers
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