GALLIUM ANTIMONIDE Property

Melting point:

710 °C 980 °C (lit.)

Density 

5.619 g/mL at 25 °C 5.62 g/mL at 25 °C (lit.)

form 

pieces

color 

brown cubic crystals, crystalline

Resistivity

~0.1 Ω-cm

Water Solubility 

Insoluble in water.

Crystal Structure

Cubic, Sphalerite Structure - Space Group F(-4)3m

Exposure limits

ACGIH: TWA 0.5 mg/m3
NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3

CAS DataBase Reference

12064-03-8(CAS DataBase Reference)

EPA Substance Registry System

Antimony, compd. with gallium (1:1) (12064-03-8)

Safety

Hazard Codes 

Xn,N

Risk Statements 

20/22-51/53

Safety Statements 

61

RIDADR 

UN 1549 6.1/PG 3

WGK Germany 

2

TSCA 

Yes

HazardClass 

6.1

PackingGroup 

III

HS Code 

2853909090

Hazard and Precautionary Statements (GHS)

Symbol(GHS)

Signal word

Warning

Hazard statements

H411Toxic to aquatic life with long lasting effects

Precautionary statements

P273Avoid release to the environment.

GALLIUM ANTIMONIDE Chemical Properties,Usage,Production

Chemical Properties

cub; 6mm pieces and smaller with 99.99% purity; band gap, eV, 0.81 (0K), 0.72 (300K); mobility (300K), cm2/(V·s), 5000 for electrons, 850 for holes; effective mass 0.042 for electrons, 0.40 for holes; dielectric constant 15.7; enthalpy of fusion 25.10kJ/mol; used in semiconducting devices; obtained by direct reaction of Ga and Sb at high temp [HAW93] [KIR82] [CER91] [CRC10]

Uses

Gallium antimonide (GaSb), when in pure form, is used in semiconductor industries.

Uses

Gallium antimonide can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems. It can be used as a component of photoresists and other composites where high refractive index is desirable

Uses

GaSb is utilized as a substrate for a low-pass filter using sharp onset oftransmission at 1.8 mm (300 K). Visible detector. The photovoltaic cell using a p–n junction has its sensibility for 0.4–0.9 mm. The cell has the maximum detectivity D*=4.5×10¹¹ cm Hz^1/2/W (400 Hz) at 0.8 mm and a time constant of ca. 10^-3s.

Production Methods

To grow single crystals, high-grade (more than 99.999%) Ga and antimony (Sb) are mixed stoichiometrically in a quartz or graphite boat and melted in an H2 atmosphere, followed by horizontal zone refining of the mixture. To grow large single crystals, the material obtained using the method above is put into a quartz or graphite crucible and melted in an H2 atmosphere after removing the surface oxide by etching. The large crystals are then grown by the Czochralski method. To obtain highgrade GaSb, the atmospheric gas H2 must be purified by flowing through heated palladium (Pd). The GaSb with the carrier density of p-type 2×10¹⁶ cm^-3and mobility of 2740 cm²/Vs has been reported for pure GaSb.This crystal can be also synthesized by the solution method. GaSb precipitates by decreasing the temperature of liquid Ga, containing 10%–20% (atomic ratio) of Sb, slowly from the melting point of GaSb.

Structure and conformation

The space lattice of gallium antimonide (GaSb) belongs to the cubic system, and its zinc blendetype structure has a lattice constant of a=0.6118 nm, Gsa–Sb=0.264 nm.