tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium
tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium Basic information
- Product Name:
- tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium
- Synonyms:
-
- (tert)-Butyliminotris(diethylamino)niobium
- (T-BUTYLIMIDO)TRIS(DIETHYLAMINO)NIOBIUM(V),MIN.98%
- (t-Butylimido)tris(diethylamino)niobium(V), min. 98%
- (t-Butylimido)tris(diethylamino)niobium(V), min. 98% TBTDEN
- t-Butylimido tris(diethylamido)niobium(V)
- Tris(diethylamido)(tert-butylimido)niobium(V)
- tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium
- Tris(diethylamido)(tert-butylimido)niobium(V) packaged for use in deposition systems
- CAS:
- 210363-27-2
- MF:
- C16H39N4Nb
- MW:
- 380.42
- Product Categories:
-
- 1
- Mol File:
- 210363-27-2.mol
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tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium Chemical Properties
- Density
- 1.015 g/mL at 25 °C
- Flash point:
- -3℃
- form
- liquid
- color
- brown
- Sensitive
- air sensitive, moisture sensitive
- InChI
- 1S/C4H9N.3C4H10N.Nb/c1-4(2,3)5;3*1-3-5-4-2;/h1-3H3;3*3-4H2,1-2H3;/q;3*-1;+3
- InChIKey
- CBCDPJRPMPTFKA-UHFFFAOYSA-N
- SMILES
- CCN(CC)[Nb](=NC(C)(C)C)(N(CC)CC)N(CC)CC
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Safety Information
- Hazard Codes
- F,Xi
- Risk Statements
- 11-14/15-36/37/38
- Safety Statements
- 26-43
- RIDADR
- UN3398 - DOT UN3399 class 4.3 - PG 2 - Organometallic substance, liquid, water-reactive, HI: all (not BR)
- WGK Germany
- 3
- Storage Class
- 4.3 - Hazardous materials which set free flammable gases upon contact with water
- Hazard Classifications
- Eye Irrit. 2
Flam. Liq. 2
STOT SE 3
Water-react 2
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tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium Usage And Synthesis
Uses
Tris(diethylamido)(tert-butylimido)niobium(V) is used as a niobium precursor
- In atomic layer deposition to create niobium-doped tin oxide (NTO), a conductive material. These NTO scaffolds provide a large surface area for thin platinum layers, improving electron transfer in dye-sensitized solar cells.
- In metal-organic chemical vapor deposition (MOCVD) to grow niobium nitride (NbN) thin films. These films, deposited on silicon wafers, offers good conductivity and are suitable for electronic applications such as gate stacks.
reaction suitability
core: niobium
tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobiumSupplier
Beijing HwrkChemical Technology Co., Ltd
- Tel
- 010-89508211 18501085097
- sales.bj@hwrkchemical.com
Sigma-Aldrich
- Tel
- 021-61415566 800-8193336
- orderCN@merckgroup.com
Domole Scientific
- Tel
- 13275595566
- domole@infsci.com
Guangdong wengjiang Chemical Reagent Co., Ltd.
- Tel
- 0751-2815688 13927872512
- 3007421951@qq.com
Hunan chemfish Scientific co.,ltd
- Tel
- 85567275 18620957644
- sales06@chemfish.com
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tris(N-ethylethanaminato)[2-methyl-2-propanaminato(2-)]-niobium(210363-27-2)Related Product Information
- NIOBIUM ETHOXIDE
- NIOBIUM BROMIDE
- NIOBIUM(V) FLUORIDE
- TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO)NIOBIUM (IV)
- NIOBIUM(V) CHLORIDE
- NIOBIUM
- Niobium oxide
- Trihydridobis(pentaMethylcyclopentadienyl)niobiuM(V)
- CYCLOPENTADIENYLNIOBIUM(V) TETRACHLORIDE
- Pentakis(dimethylamino)niobium(V)
- NIOBIUM (IV) OXIDE
- NIOBIUM 2-ETHYLHEXANOATE