C8-BTBT Chemical Properties

Melting point:

108-112°C

Boiling point:

595.9±45.0 °C(Predicted)

Density 

1.069±0.06 g/cm3(Predicted)

storage temp. 

Refrigerator, Under inert atmosphere

solubility 

Chloroform (Slightly), Ethyl Acetate (Slightly, Sonicated), Methanol (Slightly)

form 

Solid

color 

White to Light Yellow

semiconductor properties

P-type (mobility=5.5cm2/V·s)

InChI

InChI=1S/C30H40S2/c1-3-5-7-9-11-13-15-23-17-19-25-27(21-23)31-30-26-20-18-24(22-28(26)32-29(25)30)16-14-12-10-8-6-4-2/h17-22H,3-16H2,1-2H3

InChIKey

YWIGIVGUASXDPK-UHFFFAOYSA-N

SMILES

C12C3=CC=C(CCCCCCCC)C=C3SC=1C1=CC=C(CCCCCCCC)C=C1S2

Safety Information

WGK Germany 

3

HS Code 

29349990

C8-BTBT Usage And Synthesis

Uses

High field-effect mobility of 5.5-5.7 cm²/Vs and high On/Off ratio of 10⁹ ; solution-processed (solubility of 80 mg/mL) OFETs

General Description

C8-BTBT is a conducting polymer with [1]benzothieno[3,2-b][1]- benzothiophene (BTBT) as the base material for the development of air-stable semiconductors. It can form a spin coated thin film that can be used as a p-type semiconductor with charge mobility of 43 cm²V^-1s^-1. It exhibits highly ordered self-assembled monolayer (SAM) on graphene and hexagonal boron nitride (hBN) with sheet resistance: <1,000 ohm/sq

Synthesis

The general procedure for the synthesis of 2,7-dioctylbenzo[b]benzo[4,5]thieno[2,3-d]thiophene from the compound (CAS:1003601-92-0) is as follows: the compound of formula (5) obtained in synthetic Example 1 (300 mg, 0.66 mmol) was added to anhydrous toluene (10 mL) with Pd/C (70 mg). The reaction mixture was depressurized and purged with hydrogen using an aspirator, and this operation was repeated several times. Subsequently, the reaction mixture was stirred for 8 hours. After completion of the reaction, the solvent was removed by distillation. The product was purified by column chromatography (silica gel, hexane, Rf = 0.6) to give 286 mg of product in 94% yield. Further recrystallization from hexane gave a colorless powdery solid (250 mg, 82% yield) as shown in formula (6). This compound corresponds to compound 16 in Table 1. The characterization data were as follows: 1H-NMR (400 MHz, CDCl3): δ 7.75 (d, J = 8.2 Hz, 2H), 7.68 (d, J = 1.5 Hz, 2H), 7.26 (dd, J = 8.2, 1.5 Hz, 2H), 2.74 (t, J = 7.7 Hz, 4H). 1.69 (q, 4H), 1.27-1.34 (m, 20H), 0.88 (t, J = 6.7 Hz, 6H); 13C-NMR (400 MHz, CDCl3): 142.4, 140.0, 132.5, 131.1, 125.8, 123.3, 121.0, 36.1, 31.9, 31.7, 29.5 , 29.33, 29.27, 22.68, 14.1; MS (70 eV, DI) m/z = 464 (M+); melting point 112-113 °C; elemental analysis (C30H40S2) calculated values: C, 77.53; H, 8.67; measured values: C, 77.39; H, 8.67.

References

[1] Journal of the American Chemical Society, 2007, vol. 129, # 51, p. 15732 - 15733
[2] Patent: EP2077590, 2013, B1. Location in patent: Paragraph 0059