Indium(III) antimonide Property

Melting point:

535°C

Density 

5,76 g/cm³

form 

crystal

Specific Gravity

5.76

color 

black

Water Solubility 

Insoluble in water.

Crystal Structure

Cubic, Sphalerite Structure - Space Group F(-4)3m

Merck 

14,4948

Exposure limits

ACGIH: TWA 0.5 mg/m3; TWA 0.1 mg/m3
NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3; TWA 0.1 mg/m3

CAS DataBase Reference

1312-41-0(CAS DataBase Reference)

EPA Substance Registry System

Antimony, compd. with indium (1:1) (1312-41-0)

Safety

Hazard Codes 

Xn,N

Risk Statements 

20/22-51/53

Safety Statements 

61

RIDADR 

UN 1549 6.1/PG 3

WGK Germany 

2

RTECS 

NL1105000

TSCA 

Yes

HazardClass 

6.1

PackingGroup 

III

HS Code 

2853909090

Hazard and Precautionary Statements (GHS)

Symbol(GHS)

Signal word

Warning

Hazard statements

H302Harmful if swallowed

H332Harmful if inhaled

H411Toxic to aquatic life with long lasting effects

Precautionary statements

P261Avoid breathing dust/fume/gas/mist/vapours/spray.

P264Wash hands thoroughly after handling.

P264Wash skin thouroughly after handling.

P270Do not eat, drink or smoke when using this product.

P273Avoid release to the environment.

P304+P340IF INHALED: Remove victim to fresh air and Keep at rest in a position comfortable for breathing.

Indium(III) antimonide Chemical Properties,Usage,Production

Chemical Properties

Crystalline solid.

Physical properties

Black cubic crystal; zincblende structure; density 5.775 g/cm3; melts at525°C; density of melt 6.48 g/mL; dielectric constant 15.9; insoluble in water.

Uses

Indium antimonide finds use in infrared detectors, including FLIR systems, thermal imaging cameras, infrared astronomy and in infrared homing missile guidance systems, in fast transistors. It is used in thermal image detectors using photo-electromagnetic detectors or photodiodes.

Uses

Crystal structure: Zinc blende structure, cubic

Uses

In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.

Production Methods

Single crystals are grown by using the Kyropoulus method—by pulling up from the melt composed of stoichiometric In and Sb because both elements have low vapor pressure. Impurities are Zn and Cd, which cannot be removed by zone refining. As a result, it is important to use pure source materials. It is soft and fragile, and it is required to be cut carefully by a diamond cutter. The same polishing method for Si and Ge is possible.
Films are deposited using the vapor phase method. In and Sb (or In(CH3) and SbH3) are encapsuled in a vacuum and these source materials are heated to evaporate and then deposited on the substrate placed at a lower temperature portion. The electrical properties of the films deposited by this method are slightly different from those of bulk.

Production Methods

Intermetallic semiconductors of indium are formed from group III and group V elements, requiring very high purity of the elements (0.1 ppm).

Preparation

Indium antimonide may be synthesized from its elements by fusion of sto-ichiometric amounts of indium and antimony at elevated temperatures in anevacuated, sealed ampule.

General Description

This product has been enhanced for energy efficiency.

Hazard

See indium; antimony.

Structure and conformation

The space lattice of InSb belongs to the cubic system and zinc-blende-type structure called InSb-I at room temperature and under atmospheric pressure has a lattice constant of a=0.64789 nm and In–Sb=0.280 nm. A single crystal has cleavage of (110) plane. It transforms to white tin-type InSb-II at high temperatures and under high pressure.