INDIUM ARSENIDE Property

Melting point:

936°C

Density 

5.69 g/cm³

refractive index 

3.51

solubility 

insoluble in acid solutions

form 

1.5 To 9.5mm Polycrystalline Pieces

color 

Gray

Water Solubility 

Insoluble in water.

Crystal Structure

Cubic, Sphalerite Structure - Space Group F(-4)3m

Merck 

14,4949

Exposure limits

ACGIH: TWA 0.01 mg/m3; TWA 0.1 mg/m3
NIOSH: IDLH 5 mg/m3; TWA 0.1 mg/m3; Ceiling 0.002 mg/m3

EPA Substance Registry System

Indium arsenide (InAs) (1303-11-3)

Safety

RIDADR 

UN1557

TSCA 

Yes

HazardClass 

6.1

PackingGroup 

III

Hazard and Precautionary Statements (GHS)

Symbol(GHS)

Signal word

Danger

Hazard statements

H301Toxic if swalloed

H331Toxic if inhaled

H400Very toxic to aquatic life

H410Very toxic to aquatic life with long lasting effects

Precautionary statements

P261Avoid breathing dust/fume/gas/mist/vapours/spray.

P304+P340IF INHALED: Remove victim to fresh air and Keep at rest in a position comfortable for breathing.

P405Store locked up.

INDIUM ARSENIDE Chemical Properties,Usage,Production

Chemical Properties

Crystals.Insoluble in acids.

Uses

Indium arsenide is used in semiconductor devices.

Uses

Indium arsenide is used in semiconductor electronics, construction of infrared detectors, terahertz radiation source, as it is a strong Photo-dember emitter, superior electron mobility and velocity, in high-power applications detector, diode lasers.

Uses

In semiconductor electronics.

Production Methods

In and As are put into a silica boat at the stoichiometric ratio. The materials are put into a silica tube together with a small amount of As. The small amount of As is heated to about 300℃ to eliminate O2 under evacuation followed by sealing off the tube. The boat is zone-refined at the speed of 2 cm/h in the first run and 5 cm/h in the following several runs. The obtained ingot is pulled out and cut by half to use as a single crystal source. Loading the source into the silica boat with roughened inner wall, the boat is put into a horizontal silica tube together with a small amount of As followed by vacuum sealing in the same manner as the first run. A single crystal is obtained by putting the silica tube into the horizontal Stockbarger furnace with three zones: A (560℃), B (1000℃) and C (900℃), and by traveling the tube to the direction A→B→C with the speed of 2–5 cm/h. The n-type samples with about 10¹⁶ cm^-3are grown using this method. The Czochralski method is also available.
The vapor phase method is available to deposit the thin films. For instance, InAs is grown on the low temperature area by heating the closed tube loaded with In+AsCl3 together with Cl2 , which works as a carrier gas. By using this method, we can grow the epitaxial layer.

Hazard

See indium; arsenic.

Structure and conformation

The space lattice of InAs belongs to the cubic system, and its zinc-blend structure has a lattice constant of a=0.6058 nm and the nearest neighbor distance of 0.262 nm.