ALUMINUM ARSENIDE Chemical Properties

Melting point:

1740°C

Density 

3.81

refractive index 

2.94

form 

Powder

color 

Orange

Water Solubility 

Insoluble in water.

Crystal Structure

Cubic, Sphalerite Structure - Space Group F(-4)3m

Exposure limits

ACGIH: TWA 0.01 mg/m3
NIOSH: IDLH 5 mg/m3; Ceiling 0.002 mg/m3

Knoop Microhardness

5000, N/mm2

CAS DataBase Reference

22831-42-1(CAS DataBase Reference)

EPA Substance Registry System

Aluminum arsenide (AlAs) (22831-42-1)

Safety Information

Hazard Codes 

T,N

Risk Statements 

23/25-50/53

Safety Statements 

20/21-28-45-60-61

RIDADR 

UN1557

WGK Germany 

3

TSCA 

TSCA listed

HazardClass 

6.1

PackingGroup 

II

MSDS

• Language:English Provider:SigmaAldrich
• Language:English Provider:ALFA

ALUMINUM ARSENIDE Usage And Synthesis

Chemical Properties

-20 mesh powder(s) with 99.5% purity; semiconductor; band gap, 2.13eV (22°C); electronic dielectric constant, 10.3; lattice constant a=0.5662 nm; enthalpy of fusion 24.5 kJ/mol; uses: in rectifiers, transistors, and thermistors [CIC73] [ALF93] [HAW93]

Uses

Aluminum arsenide is used for the manufacture of optoelectronic devices, such as light emitting diodes. It is used in the production of some solar cells. It is also used in rectifiers, transistors, thermistors.

Definition

A semiconductor used in rectifiers, transistors, thermistors.

Hazard

Poisonous by ingestion.

Synthesis

A method for efficiently preparing high-purity aluminum arsenide, which is a gas phase deposition method, in which aluminum trichloride and arsenic trichloride are heated and volatilized into vapor in a volatilization chamber under argon protection, respectively, and then sprayed into a reaction chamber through a nozzle to react, and gas phase deposition generates aluminum arsenide crystals. The specific steps are as follows: (1) argon as a protective gas, aluminum trichloride and arsenic trichloride according to the molar mass ratio of 1:1 ~ 1.5:1 take material, respectively, placed in the first volatile chamber 1 and the second volatile chamber 2, 300 ~ 900 ?? C under the condition of volatilization of 0.5h ~ 12h, so that the two materials are in the state of steam; (2) through the nozzle will be two volatile chamber in the aluminum trichloride and arsenic trichloride steam through the first nozzle 4 and the second nozzle 5 respectively at the same time sprayed into a titanium material made of reaction chamber 3, under the condition of 300 ~ 900 ?? C reaction of 2h ~ 5h, the gas phase deposition to get the deposit; the remaining volatile gas at room temperature pressurized to 600 ~ 700 kPa or cooled to -34 ?? C at atmospheric pressure to get the liquid chlorine; _ x000D_ (3) The resulting deposit is heated and volatilized for 2h??12h, with a heating temperature of 300??900?? and a pressure of 0.5??100KPa, the residual chlorine is removed, and cooled to obtain orange crystalline aluminum arsenide with a purity greater than 99.9%. Said first volatilization chamber 1 and second volatilization chamber 2 may be made of metal-heated volatilization equipment of the prior art, such as a side-blown electric furnace, with nozzles opposite the reaction chamber connected to the air eyes of the electric furnace. The reaction chambers may also be electrically heated furnaces, and the deposits are obtained by gas phase deposition; the remaining volatile gases are led out of the reaction chambers and pressurized to 600-700 kPa at ambient temperature or cooled to -34??C at ambient pressure to obtain liquid chlorine.

ALUMINUM ARSENIDE(22831-42-1)Related Product Information

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