Bis(diethylamino)silane Chemical Properties

Boiling point:

70°C (30mm)

Density 

0.804

form 

liquid

pka

10.31±0.70(Predicted)

Specific Gravity

0.804

color 

colorless

Sensitive 

air sensitive, moisture sensitive

Hydrolytic Sensitivity

8: reacts rapidly with moisture, water, protic solvents

InChI

InChI=1S/C8H22N2Si/c1-5-9(6-2)11-10(7-3)8-4/h5-8,11H2,1-4H3

InChIKey

OWKFQWAGPHVFRF-UHFFFAOYSA-N

SMILES

[SiH2](N(CC)CC)N(CC)CC

Bis(diethylamino)silane Usage And Synthesis

Uses

Bis(diethylamino) silane (BDEAS) is a highly volatile precursor with a vapor pressure of 30 Torr at 70°C and is liquid at room temperature with a melting point of less than ?10°C and a boiling point of 188°C. It is studied and evaluated as a liquid-phase silicon precursor in the low-temperature atomic layer deposition (ALD) of hafnium silicate films. BDEAS and TDEAH are suitable precursors for the ALD of SiO2, HfO2, or HfSiOx films when used in conjunction with ozone. The composition of various HfSiOx films evaluated from RBS spectra demonstrates excellent tunability of film composition[1].

References

[1] Rajesh Katamreddy, C. Takoudis, B. Feist. “Bis(diethylamino) silane as the silicon precursor in the atomic layer deposition of HfSiOx.” Journal of The Electrochemical Society 155 1 (2008).

Bis(diethylamino)silane(27804-64-4)Related Product Information

• BTBAS
• Bis(dimethylamino)dimethylsilane
• N-[3-(Trimethoxysilyl)propyl]ethylenediamine