GERMANIUM NITRIDE
Description References- Product Name
- GERMANIUM NITRIDE
- CAS No.
- 12065-36-0
- Chemical Name
- GERMANIUM NITRIDE
- Synonyms
- GERMANIUM NITRIDE;PubChem ID: 16684757;germanium(IV) nitride;germanium(iii) nitride;GERMANIUM TETRANITRIDE;trigermanium tetranitride;GERMANIUM NITRIDE, 99.99+%;GERMANIUM NITRIDE ISO 9001：2015 REACH;Germanium(III) nitride >=99.99% trace metals basis;Cobalt Nickel Chromium (Co-Ni-Cr) Alloy Sputtering Targets
- CBNumber
- CB7776601
- Molecular Formula
- Ge3N4
- Formula Weight
- 273.95
- MOL File
- 12065-36-0.mol
GERMANIUM NITRIDE Property
- Melting point:
- >850 °C (dec.)(lit.)
- Density
- 5.35 g/mL at 25 °C(lit.)
- solubility
- insoluble in H2O, acid solutions, aquaregia
- form
- orthorhombic crystals
- Specific Gravity
- 5.35
- color
- orthorhombic crystals, crystalline
- Water Solubility
- insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10]
- EPA Substance Registry System
- Germanium nitride (Ge3N4) (12065-36-0)
Hazard and Precautionary Statements (GHS)
- Symbol(GHS)
-
- Signal word
- Warning
- Hazard statements
-
H315Causes skin irritation
H319Causes serious eye irritation
H335May cause respiratory irritation
- Precautionary statements
-
P261Avoid breathing dust/fume/gas/mist/vapours/spray.
P264Wash hands thoroughly after handling.
P264Wash skin thouroughly after handling.
P271Use only outdoors or in a well-ventilated area.
P280Wear protective gloves/protective clothing/eye protection/face protection.
P302+P352IF ON SKIN: wash with plenty of soap and water.
P305+P351+P338IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continuerinsing.
GERMANIUM NITRIDE Chemical Properties,Usage,Production
Description
Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3
References
- G. Maggioni, S. Carturan, L. Fiorese, N. Pinto, F. Caproli, D. R. Napoli, M. Giarola, G. Mariotto, Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors, 2017, vol. 393, pp.119-126
- H. Kondo, I. Yanagi, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, Electrical properties and bonding structures of germanium nitride/Ge(100) structures formed by radical nitridation, 2006, vol. 3, pp. 287-289
- P. Walker, W. H. Tarn, CRC Handbook of Metal Etchants, 1991, ISBN 0-8493-6323-6
Chemical Properties
brownish-white powder(s); -200 mesh with 99.999% purity; prepared by reacting Ge powder(s) and ammonia at 700°C–850°C; ortho-rhomb; a=1.384nm, b=0.406 nm, c=0.818 nm [CIC73] [CER91] [CRC10]
GERMANIUM NITRIDE Preparation Products And Raw materials
Raw materials
Preparation Products
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