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GERMANIUM NITRIDE

Description References
Product Name
GERMANIUM NITRIDE
CAS No.
12065-36-0
Chemical Name
GERMANIUM NITRIDE
Synonyms
GERMANIUM NITRIDE;PubChem ID: 16684757;germanium(IV) nitride;germanium(iii) nitride;GERMANIUM TETRANITRIDE;trigermanium tetranitride;GERMANIUM NITRIDE, 99.99+%;GERMANIUM NITRIDE ISO 9001:2015 REACH;Germanium(III) nitride >=99.99% trace metals basis;Cobalt Nickel Chromium (Co-Ni-Cr) Alloy Sputtering Targets
CBNumber
CB7776601
Molecular Formula
Ge3N4
Formula Weight
273.95
MOL File
12065-36-0.mol
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GERMANIUM NITRIDE Property

Melting point:
>850 °C (dec.)(lit.)
Density 
5.35 g/mL at 25 °C(lit.)
solubility 
insoluble in H2O, acid solutions, aquaregia
form 
orthorhombic crystals
Specific Gravity
5.35
color 
orthorhombic crystals, crystalline
Water Solubility 
insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10]
EPA Substance Registry System
Germanium nitride (Ge3N4) (12065-36-0)
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Safety

Hazard Codes 
Xi
Risk Statements 
36/37/38
Safety Statements 
26-36
WGK Germany 
3
TSCA 
Yes
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Hazard and Precautionary Statements (GHS)

Symbol(GHS)
Signal word
Warning
Hazard statements

H315Causes skin irritation

H319Causes serious eye irritation

H335May cause respiratory irritation

Precautionary statements

P261Avoid breathing dust/fume/gas/mist/vapours/spray.

P264Wash hands thoroughly after handling.

P264Wash skin thouroughly after handling.

P271Use only outdoors or in a well-ventilated area.

P280Wear protective gloves/protective clothing/eye protection/face protection.

P302+P352IF ON SKIN: wash with plenty of soap and water.

P305+P351+P338IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continuerinsing.

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GERMANIUM NITRIDE Chemical Properties,Usage,Production

Description

Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3

References

  1. G. Maggioni, S. Carturan, L. Fiorese, N. Pinto, F. Caproli, D. R. Napoli, M. Giarola, G. Mariotto, Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors, 2017, vol. 393, pp.119-126
  2. H. Kondo, I. Yanagi, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, Electrical properties and bonding structures of germanium nitride/Ge(100) structures formed by radical nitridation, 2006, vol. 3, pp. 287-289
  3. P. Walker, W. H. Tarn, CRC Handbook of Metal Etchants, 1991, ISBN 0-8493-6323-6

Chemical Properties

brownish-white powder(s); -200 mesh with 99.999% purity; prepared by reacting Ge powder(s) and ammonia at 700°C–850°C; ortho-rhomb; a=1.384nm, b=0.406 nm, c=0.818 nm [CIC73] [CER91] [CRC10]

GERMANIUM NITRIDE Preparation Products And Raw materials

Raw materials

Preparation Products

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12065-36-0, GERMANIUM NITRIDERelated Search:


  • trigermanium tetranitride
  • GERMANIUM NITRIDE, 99.99+%
  • germanium(iii) nitride
  • GERMANIUM NITRIDE
  • GERMANIUM TETRANITRIDE
  • Germanium(III) nitride >=99.99% trace metals basis
  • PubChem ID: 16684757
  • GERMANIUM NITRIDE ISO 9001:2015 REACH
  • Cobalt Nickel Chromium (Co-Ni-Cr) Alloy Sputtering Targets
  • germanium(IV) nitride
  • 12065-36-0
  • Ge3N4
  • N4Ge3
  • Nitrides
  • Ceramics
  • Metal and Ceramic Science