TRIMETHYLINDIUM Chemical Properties

Melting point:

88°C

Boiling point:

135.7°C

Density 

1,568 g/cm³

Flash point:

-18°C

form 

crystal

color 

white

Sensitive 

heat sensitive, moisture sensitive, store cold

Safety Information

Risk Statements 

14-17-34

Safety Statements 

7-16-43-45

RIDADR 

2845

TSCA 

Yes

HazardClass 

4.2

PackingGroup 

I

TRIMETHYLINDIUM Usage And Synthesis

Properties

WARNING Trimethylindium may undergo rapid thermal decomposition if exposed to temperatures above 100°C. Never attempt to distill the material at atmospheric pressure.

Application

Trimethylindium is used as a high-quality solid indium source for semiconductor compound deposition in high-performance and high-efficiency solar cells such as light-emitting diodes, laser diodes, and transistors.

Synthesis

In a reactor filled with inert gas, the raw material of indium-magnesium alloy was put into the reactor, in the presence of ether solvent, the halothane was added gradually under stirring condition, and the solvent reflux rate was controlled by controlling the titration rate of the halothane, and the solvent was evaporated out after the completion of the reaction, then the complex of trimethylindium and ether was obtained under reduced pressure, and finally trimethylindium was obtained by deconvolution.

TRIMETHYLINDIUM(3385-78-2)Related Product Information

• Dichlorodihydrosilane
• Diethylzinc
• Triphenylbismuth
• (Trimethyl)methylcyclopentadienylplatinum(IV)
• Bis(triphenylphosphinepalladium) acetate
• Trimethylaluminium
• TRIMETHYLANTIMONY
• TRIMETHYLGALLIUM
• DIMETHYLETHYLINDIUM
• triethylindium
• INDIUM NITRATE
• TRIMETHYLINDIUM